Modeling and Electrothermal Simulation of SiC Power Devices
By:Bejoy N Pushpakaran,Stephen B. Bayne
Published on 2019-03-14 by World Scientific Publishing Company
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco(c) ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers and semiconductor professionals working in the area of SiC semiconductor technology. Readers will find the source code of several fully functional simulation programs that illustrate the use of Silvaco(c) ATLAS to simulate SiC power device structure, as well as supplementary material for download.
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Book ID of Modeling and Electrothermal Simulation of SiC Power Devices's Books is 7g9UswEACAAJ, Book which was written byBejoy N Pushpakaran,Stephen B. Baynehave ETAG "QzRhXgd+EGs"
Book which was published by World Scientific Publishing Company since 2019-03-14 have ISBNs, ISBN 13 Code is 9789813237827 and ISBN 10 Code is 9813237821
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